January 29, 2017
(modified on October 5, 2017)

My Book Chapter in
"Chemical Vapor Deposition (CVD): Types, Uses and Selected Research"

Have you ever learned junction formation process as a key technology in semiconductor devices? This field is full of science of  materials and phenomena which are hardly seen by human eyes. How do we see the real face and behavior of materials?

I wrote a chapter on semiconductor process in a specialized book as follows. The content is related to various fields of material science, engineering and physics of nanoelectronic devices.

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In the city of Sapporo at northern land of Japan, there was a high school student who wanted to study semiconductor. When connecting several ICs (integrated circuits) like a black centipede, a computer can be made. The high school student was interested in such a thing.

"What kind of structure does the IC have?"
"How is the IC fabricated?"
"What kind of technology is missing to improve performance?"

He wanted to know concretely. However, the Internet has not yet been popular at the time. When he was looking for specialized books at book stores, he could not find easy ones to be understood by very ordinary high school students. He thought he had no idea who can kindly guide him about it.

Though he just started to study programming, his interest in it had gone somewhere. He decided to go to university to study unknown world of semiconductors in the ICs.

It should be noted that it was easy for him to decide it. Because his head had got filled by a thought "I just want to learn it!", there was no room for other thoughts to compete. Besides that, his parents and family did not complain anything about his dicision and they supported him gently. It was great help for him.

After that, what happened to the high school student?

He has graduated a university at the city of Sendai and also been working as the university teacher for more than 20 years. Of course, he has been studying semiconductors.

His dream has come true.

Interestingly, Sendai was not the course he had originally planned. It was an unfamiliar place for him and he did not know almost anything about on-going history of the university at Sendai.

Moreover, very surprisingly, the university was filled with a plenty of conditions and timing necessary for his studying semiconductor. He could never regard it as just a rare coincidence. He believed it was a destiny which had been prepared previously.

In this way, the high school student has become a researcher of semiconductor. For young students visiting to the laboratory, he is teaching how to proceed researches and how to write academic papers. He is also giving lectures on paths up to achievements and useful ideas in research.

That is me.

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You will find a few key points of state-of-the-art semiconductor device fabrication and a reason why we study on plasma CVD for the devices. Additionally, you will find a scene of creation of new material in the field of material science.

Although it is specialized for engineers and material scientists, I would appreciate if many people could read the chapter to know my activity and prospects in research as well as the way of my thinking.

Chapter 4 :
"Low-Energy Plasma CVD for Epitaxy and In-Situ Doping of Group-IV Semiconductors in Nanoelectronics",
Masao Sakuraba, Hisanao Akima and Shigeo Sato,
Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University
pp.61-115

>> How to read my chapter on FREE PDF <<

Book Title : "Chemical Vapor Deposition (CVD): Types, Uses and Selected Research" (Edited by Monica Powell, Nova Science Publishers, Inc., Feb. 14, 2017). Click to enlarge Links to Publisher Book (ISBN978-1-53610-893-4) ebook (ISBN978-1-53610-908-5) https://novapublishers.com/shop/chemical-vapor-deposition-cvd-types-uses-and-selected-research/

Buy via Amazon.com Buy via Amazon.co.jp

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4.1  Introduction
4.2  Epitaxy as a Technology Driver in Si LSI
4.3  Surface Orientation and Hydrogen Termination of Silicon Surface for Low-Temperature Epitaxy
4.4  Low-Energy ECR Plasma CVD Processing
4.5  Epitaxy of Silicon and Germanium
4.6  Epitaxy of Silicon-Germanium Alloy
4.7  Epitaxy of Silicon-Carbon Alloy
4.8  In-Situ Doping of Boron in Silicon and Germanium Epitaxy
4.9  Atomic-Layer Doping of Boron in Silicon Epitaxy
4.10  Low-Stress Silicon Nitride Filim Formation under Low-Energy Nitrogen Plasma Irradiation
4.11  Smart Plasma Process for Semiconductor Device Fabrication
4.12  Challenge of Crystal Structure Transformation in Silicon Nano Sheet by Plasma-Induced Reconstruction
4.13  Conclusions and Future Prospects

"In a trend for highly-scaled semiconductor devices and quantum-tunneling devices in Si large-scale integrated circuits (LSI), lower-temperature processing for epitaxy and in-situ doping is necessary and has been pursued because suppression of diffusion length is indispensable. We have been developing a low-energy electron-cyclotron-resonance (ECR) plasma chemical vapor deposition (CVD) processing and we have enabled epitaxy of Si, Ge, Si-Ge alloy and Si-C alloy on Si(100) without substrate heating. Moreover, we succeeded in demonstration of effective in-situ doping and practical rectifying characteristics in p-n junction diodes as well as high carrier mobility in the epitaxial films. Moreover, p-type B atomic-layer (AL) doping in Si epitaxy without substrate heating was experimentally demonstrated. This AL doping technique is expected to be applicable not only to low-resistive semiconductor film formation but also to two-dimensional impurity-band formation which is far from thermal equilibrium. By using low-energy ECR nitrogen plasma, low-stress Si nitride film formation was also demonstrated by SiH₄ reaction and modification of film properties by subsequent plasma nitridation. Most striking point is that these practical film properties can be obtained without substrate heating. Therein, monitoring temperature and waiting for heating-up and cooling-down are not necessary. This means that semiconductor device fabrication becomes “smart” in a viewpoint of consuming time, materials, energy and human. Additionally, new concept of crystal structure transformation in Si from the diamond structure into non-diamond structure was suggested to explore novel property creation. Thus, the low-energy ECR plasma CVD processing is expected to contribute to various fields of material science, engineering and physics of nanoelectronic devices."
 

>> How to read my chapter on FREE PDF <<

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