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受 賞・講義・招待講演

Awards / Lectures / Invited Presentations


【受賞 Awards】

1. トーキン科学技術振興財団 研究奨励賞、“原子層積層によるIV族半導体量子ヘテロ構造の製作”、平成14年3月26日．
Research Encouragement Award, Tokin Foundation for Advancement of Science and Technology (Japan), "Quantum Heterostructure Formation of Group IV Semiconductors Using Atomically Controlled Deposition", March 26, 2002.
https://www.tokin.com/zaidan/

2. 石田實記念財団　研究奨励賞、“IV族半導体量子ヘテロ構造高集積化のためのプラズマCVDプロセスに関する研究”、平成27年11月27 日．
Research Encouragement Award, Minoru Ishida Foundation (Japan), "Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors", November 27, 2015.
http://www.ishida-kinenzaidan.or.jp/


【最 近の講 義 Recent Lectures】

1. 半導体デバイス、東北大学  工学部  電気情報物理工学科、第5セメスター、2017〜2022年度（毎 年）．

Semiconductor Devices, Dept. of Electrical, Information and Physics Engineering, School of Engineering, Tohoku University, Japan, 5th Semester, 2017-2022 (every year).


2. 半導体材料プロセス工学、東北大学 工学部 電気情報物理工学科、第6セメスター、2017〜2021年度（毎年）．
Semiconductor Materials and Process Engineering, Dept. of Electrical, Information and Physics Engineering, School of Engineering, Tohoku University, Japan, 6th Semester, 2017-2021 (every year).


3. 電子材料プロセス工学、東北大学大学院  工学研究科  電子工学専攻、第1セメスター、2014〜2022 年度（偶数年）．
Electronic Materials and Process Engineering, Dept. of Electronic Engineering, Graduate School of Engineering, Tohoku University, Japan, 1st Semester, 2014-2022 (every even-numbered year).


4. 微細プロセス科学、東北大学大学院  工学研究科 電子工学専攻、第2セメスター、2013〜2021 年度（奇数年）．
Science of Advanced Micro-Processing, Dept. of Electronic Engineering, Graduate School of Engineering, Tohoku University, Japan, 2nd Semester, 2013-2021 (every odd-numbered year).


5. 半導体デバイス工学、岩手大学  理工学部  物理材料理工学科（非常勤講師）、第6セメスター、2020〜2021 年度（毎年）．
Semiconductor Device Engineering, Dept. of Physical Science and Materials Engineering, Faculty of Science and Engineering, Iwate University (Part-Time Lecturer), Japan, 6th Semester, 2020-2021 (every year).


6. 集積回路基礎、仙台高等専門学校（広瀬 キャンパス） 知能エレクトロニクス学科（非常勤講師）、5年生前期、2016〜2020 年度（毎 年）．
Fundamentals of Integrated Circuits, Dept. of Intelligent Electronics, National Institute of Technology, Sendai College (Part-Time Lecturer), Japan, 2nd Semester of 5th Grade, 2016-2020 (every year).



【招待講演 Invited Presentations】

1. "Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD" (Invited Talk),
M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota,
Abs. 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, Abs.No.S1-I3, pp.14-15.

2. "Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si1-xGex Epitaxially Grown on Si(100)" (Invited Talk),
M. Sakuraba, R. Ito, T. Seo and J. Murota,
Proc. Symp. E9: ULSI Process Integration 5, Washington, DC, USA, Oct. 7-12, 2007 (ECS Trans., Vol.11, No. 6, Edited by C. Claeys, H. Iwai, M. Tao, J. Murota, J. J. Liou, S. Deleonibus, The Electrochem. Soc., Pennington, NJ, 2007), pp.131-139: Abs. 212th Electrochem. Soc. Meeting, Abst.No.1283.

(Abs.) http://ecst.ecsdl.org/content/11/6/131.abstract

(Proc.) http://ecst.ecsdl.org/content/11/6/131.full.pdf+html

3. "Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si1-xGex Epitaxially Grown on Si(100)" (Invited Talk),
M. Sakuraba and J. Murota,
Abs. 1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09), Vigo, Spain, Sep. 20-23, 2009, pp.81-82.

4. "Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing" (Invited Talk),
M. Sakuraba, T. Nosaka, K. Sugawara and J. Murota,
Abs. 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.I-13, pp.69-70.

5. "Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductors" (Invited Talk),
M. Sakuraba and J. Murota,
Proc. 10th IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010), Shanghai, China, Nov. 1-4, 2010, Proc.No.I12_07.

6. "Fabrication of Room-Temperature Resonant Tunneling Diode with Atomically Controlled Strained Si1-xGex/Si Quantum Heterostructure" (Invited Talk),
M. Sakuraba and J. Murota,
Abs. 4th French Research Organizations - Tohoku University Joint Workshop on Frontier Materials (Frontier 2011), Sendai, Japan, Dec. 4-8, 2011, p.35.

7. "Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors" (Invited Talk),
M. Sakuraba and J. Murota,
Abs. 6th Int. WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration", Tohoku Univ., Sendai, Japan, Feb. 22-23, 2013, Abs.No.D-3.


8. "Formation of Heavily B-Doped Si and Ge Films Epitaxially Grown on Si(100) by Low-Energy ECR Ar Plasma CVD without Substrate Heating" (Invited Talk),
M. Sakuraba, J. Murota and S. Sato,
Abs. JSPS Core-to-Core Program Workshop “Atomically Controlled Processing for Ultralarge Scale Integration”, IHP, Frankfurt (Oder), Germany, Oct. 24-25, 2013, Abs.No.01.

9. "Group-IV Semiconductor Quantum Heterointegration by Low-Energy Plasma CVD Processing" (Invited Talk),
M. Sakuraba and J. Murota,
Proc. Symp. E12: ULSI Process Integration 8, San Francisco, USA, Oct. 27-Nov. 1, 2013 (ECS Trans., Vol.58, No.9, Edited by C. Claeys, H. Iwai, M. Tao, S. Deleonibus, J. Murota, The Electrochem. Soc., Pennington, NJ, 2013), pp.195-200: Abs. 224th Electrochem. Soc. Meeting, Abs.No.2226.

(Abs.) http://ecst.ecsdl.org/content/58/9/195.abstract

(Proc.) http://ecst.ecsdl.org/content/58/9/195.full.pdf+html

10. "Thin Film Formation of Si1-xGex Alloy on Si(100) for Quantum-Effect Nano Heterostructure by ECR Ar Plasma CVD without Substrate Heating" (Invited Talk),
M. Sakuraba, N. Ueno and S. Sato,
Abs. JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultralarge Scale Integration, imec, Leuven, Belgium, Nov. 13-14, 2014, Abs.No.6.2.

11. "Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition for Group-IV Semiconductor Quantum-Heterostructure" (Invited Talk),
M. Sakuraba and S. Sato,
Abs. Energy Materials Nanotechnology (EMN) Meeting on Photovoltaics, Orlando, FL, USA, Jan. 12-15, 2015, Abs.No.A13, pp.28-29.

12. "Group-IV Quantum-Heterostructure Formation Based on Low-Energy Plasma CVD towards Electronic Device Application" (Invited Talk),
M. Sakuraba, H. Akima and S. Sato,
Abs. Energy Materials Nanotechnology (EMN) Hong Kong Meeting, Hong Kong, China, Dec. 9-12, 2015, Abs.No.D10, pp.135-136.

13. "Low-Energy Plasma CVD Processing for Quantum Heterointegration of Group-IV Semiconductors" (Invited Talk),
M. Sakuraba, H. Akima and S. Sato,
2nd Joint IT Workshop of Moscow State University-Tohoku University, Moscow State University, Moscow, Russia, Sep. 7, 2015.

(Program) https://cs.msu.ru/en/news/2196


14. "Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Quantum Heterointegration in Nanoelectronics" (Invited Talk),
M. Sakuraba, H. Akima and S. Sato,
Abs. Energy Materials Nanotechnology (EMN) Meeting on Epitaxy, Budapest, Hungary, Sep. 4-8, 2016, No.A19, pp.61-63.

(Abs.) https://doi.org/10.13140/RG.2.2.27706.18889

15. "Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Nanoelectronics" (Invited Talk),
M. Sakuraba, H. Akima and S. Sato,
Abs. 11th Int. WorkShop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Feb. 23-24, 2018, Abs.No.I-14, pp.27-28.
http://www.murota.riec.tohoku.ac.jp/EI4GroupIV-WS2018/


16. "Epitaxy and In-Situ Doping in Low-Energy Plasma CVD Processing for Group-IV Semiconductor Nanoelectronics" (Invited Lecture),
M. Sakuraba and S. Sato,
Abs. 11th Int. Symp. on Advanced Plasma Science and its Application for Nitrides and Nanomaterials / 12th Int. Conf. on Plasma-Nano Technology & Science (ISPlasma/IC-PLANTS), Nagoya, Japan, Mar. 17-21, 2019, Abs.No.19aC06I.
http://www.isplasma.jp/www2019/file/program_3_19.pdf


17. "Low-Energy Plasma Enhanced Epitaxy and In-Situ Doping for Group-IV Semiconductor Device Fabrication" (Invited Talk),
M. Sakuraba and S. Sato,
Abs. 2019 Collaborative Conf. on Materials Research (CCMR), Gyeonggi Goyang/Seoul, South Korea, June 3-7, 2019, pp.100-104.
http://ccmr2019.org/programs/scientific-session-programs/


18. "Low-Energy Plasma Enhanced Chemical Vapor Deposition and In-Situ Doping for Junction Formation in Group-IV Semiconductor Devices" (Invited Talk),
M. Sakuraba and S. Sato,
Symp. G03: Semiconductor Process Integration 11, 236th Meeting of the Electrochem. Soc., Atlanta, GA, Oct. 13-17, 2019, Abs.No.G03-1164 .
https://iopscience.iop.org/article/10.1149/MA2019-02/25/1164